One Device Memory Structure Using Various Depth V-Groove Openings
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-12
A one-device random-access-memory structure is described along with a method for fabricating the structure. The one-device memory structure includes various-depth V-groove openings for surface devices, devices with buried sources, and for isolation. The structure described herein provides improved transfer ratio and device density, and the fabrication method requires fewer masks than previous schemes. More particularly, the described structure minimizes the bit line width tolerance by defining the bit line and the V-groove opening with a single masking operation. In addition, with the same process. surface VMOS devices can be fabricated during the same masking operation.