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Metal Silicide Silicon Photodiode

IP.com Disclosure Number: IPCOM000053598D
Original Publication Date: 1981-Oct-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Ohdomari, I Seki, H [+details]

Abstract

Schottky barriers formed by metal silicides and silicon (Si) are likely to lead to improved Si photodiodes compared to p-n junction or metal-Si Schottky barrier Si photodetectors. Recent studies of metal silicide-Si electrical properties indicate the following advantages: (1) Relative insensitivity of the junction property to the original Si surface condition, resulting in overall uniformity of photoresponse; (2) Possibility of controlling the effective barrier height of the junction by the choice of metal for the silicide, leading to the ability to tailor the wavelength response of the diode;