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Permeable Base Transistor

IP.com Disclosure Number: IPCOM000053628D
Original Publication Date: 1981-Oct-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Marinace, JC [+details]

Abstract

A permeable-base transistor with minimized crystal defects is formed by etching away a portion of a first epitaxial layer on which the embedded metallic members are positioned so as to remove embedded metallic debris and crystal imperfections from between the embedded members.