Browse Prior Art Database

GaAs Lossy Gate Dielectric FET

IP.com Disclosure Number: IPCOM000053629D
Original Publication Date: 1981-Oct-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Andrade, TL Braslau, N [+details]

Abstract

This article relates generally to field effect transistors and more particularly to gallium arsenide field-effect transistors wherein the gate dielectric of the transistor is lossy.