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This article relates generally to field effect transistors and more particularly to gallium arsenide field-effect transistors wherein the gate dielectric of the transistor is lossy.
English (United States)
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This is the abbreviated version, containing approximately
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GaAs Lossy Gate Dielectric FET
This article relates generally to field effect transistors and more particularly to
gallium arsenide field-effect transistors wherein the gate dielectric of the
transistor is lossy.
A GaAs MISFET (metal insulator semiconductor field-effect transistor)
structure using a lossy gate dielectric (Rho > 10/8/ Omega cm) having essentially
no transconductance degradation for DC operation is disclosed. The MISFET
structure is attractive for high power microwave amplification because of the
absence of forward biased gate current. Furthermore, the gate dielectric
provides additional drain-gate leakage isolation. Prior-art MISFETs suffered
severe low frequency transconductance degradation, all but eliminating their
usefulness. A previously reported gate structure was used only as a switch [*].
In the present device, a 1000 Angstrom CVD-deposited TiO dielectric,
wherein x Approximately = 2, is deposited over an ion-implanted channel (V
Approximately) uses alloyed AuGeNi ohmic contacts. The TiO(x) is wet
patterned and the gate defined over the TiO(x) by a known A1 lift-off process.
FETs made by this technique when compared to other MESFETs without the TiO
dielectric show less than 10% lower transconductance. The gate capacitance of
the resulting MISFET device is also reduced. At microwave frequencies, both of
these reductions are small due to the large dielectric constant of TiO(x) (Epsilon
> 35). This device may operate at forward gate bias grea...