The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
Thin glass films produced by oxidation of silane and diborane can act as an excellent source for doping boron into silicon.
English (United States)
This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
82% of the total text.
Page 1 of 2
High Speed, High Gain, Shallow Bipolar Devices
Thin glass films produced by oxidation of silane and diborane can act as an
excellent source for doping boron into silicon.
In conjunction with a deep base implantation such a doped glass process can
then be utilized to fabricate (1) devices with a highly conducting extrinsic
conduction type base, with a 10-15% faster switching time, and (2) devices with
emitters that do not have doping compensation, which have high gain and
frequency response which provides a 10% improvement in switching time (and
devices with a 1 Mum thick epitaxial device layer. The extrinsic base profile is
sharp, which provides a 25% switching time improvement.)
The device is made by the following illustrated process.
Fig. 1 illustrates a partially fabricated bipolar device which consists of an
isolation, buried subcollector and an n-epitaxial layer covered with a thin, 250
Angstrom layer of thermally grown SiO recessed oxide (REOX). Fig. 1 shows a
deep base implant defining base area.
Fig. 2 shows the structure of Fig. 1 with 1400 Tilde 2000 Angstrom of
chemical vapor deposited (CVD) doped oxide glass (B(2)O(2)-SiO(2)) covered by
about 1600 Angstrom of Si(3)N(4).
Fig. 3 shows the structure of Fig. 2 with the base, emitter and collector
contact openings formed by masking and photolithographic techniques.
Fig. 4 shows the structure of Fig. 3 wherein the base contact is blocked off.
The oxide is etched out in the emitter and collector contacts. Th...