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By employing this process, a thin film resistor can be passivated and electrical contacts formed without the need of using an additional masking step.
English (United States)
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Maskless Process for Passivating Thin Film Resistors
By employing this process, a thin film resistor can be passivated and
electrical contacts formed without the need of using an additional masking step.
As illustrated in Fig. 1, a base or substrate 10, which may be made of metal,
an insulator or a semiconductor, has disposed thereon electrically conductive
films or segments 12 and 14, made, e.g., of copper-doped aluminum, and an
insulating layer 16. A thin film resistor 18 is formed by depositing a film, such as
silicon chromium, on insulating layer 16 and in contact with conductive films 12
and 14. The resistor 18 may be patterned by conventional photolithographic
techniques and annealed, as necessary.
Ball limiting metallurgy, such as a chromiumcoppergold film 20, is also
deposited in contact with conductive film 12 and lead tin or solder 22 is then
evaporated onto film 20. A thin passivation layer 24 made of a brittle material,
such as glass, is deposited by a low temperature process onto resistor 18 and
lead tin or solder 22 to a thickness on the order of 0.1 to 1.0 micron.
After passivating layer 24 is formed, the structure is subjected to a solder
reflow process which softens or melts solder 22. During the solder reflow
process, the cylindrical or truncated cone form of the solder 22, illustrated in Fig.
1, is modified into a substantially spherical form controlled by the wetting of the
solder 22 and its surface tension. Since passivating layer 24 is britt...