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High Resolution Method to Examine X Ray Resist Replica

IP.com Disclosure Number: IPCOM000053802D
Original Publication Date: 1981-Nov-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Feder, R [+details]

Abstract

This article describes a method to examine an X-ray contact resist replica by Transmission Electron Microscopy (TEM). TEM has a resolution capability better than 2 nm, and since the resist replica is capable of spatially discriminating differences down to 5 nm, any TEM is capable of seeing details in the replica. Furthermore, the common usage of TEMs in all laboratories makes the contact X-ray technique much more attractive.