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Method for Producing Single Crystal Silicon on an Insulating Substrate

IP.com Disclosure Number: IPCOM000053847D
Original Publication Date: 1981-Nov-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Kinney, WI Lasky, JB [+details]

Abstract

A method is provided for producing single crystal silicon on an insulated substrate by scanning with a beam from a continuous energy source a polysilicon layer formed on the insulating substrate and extending laterally from a crystalline/polycrystalline interface arranged substantially perpendicular to the polysilicon layer.