Browse Prior Art Database

Low Contact Resistance Contact to Silicon

IP.com Disclosure Number: IPCOM000053879D
Original Publication Date: 1981-Nov-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Joy, RC Riseman, J [+details]

Abstract

The ohmic contact to the emitter of a bipolar transistor is believed to be due to tunneling phenomena through a highly doped Schottky barrier. Dropping the barrier height improves this contact resistance.