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The ohmic contact to the emitter of a bipolar transistor is believed to be due to tunneling phenomena through a highly doped Schottky barrier. Dropping the barrier height improves this contact resistance.
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Low Contact Resistance Contact to Silicon
The ohmic contact to the emitter of a bipolar transistor is believed to be due
to tunneling phenomena through a highly doped Schottky barrier. Dropping the
barrier height improves this contact resistance.
A smaller band gap material, such as germanium, is used to form
this contact. Germanium can be applied by evaporation, sputtering,
or chemical vapor deposition, and would be highly doped with arsenic.
The preferred metallurgy includes titanium-tungsten as a barrier
metal. The contact systems are: Silicon / poly Si(1)(n+) / poly Ge (n+) / TiW / Al.