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Low Contact Resistance Contact to Silicon Disclosure Number: IPCOM000053879D
Original Publication Date: 1981-Nov-01
Included in the Prior Art Database: 2005-Feb-12

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Joy, RC Riseman, J [+details]


The ohmic contact to the emitter of a bipolar transistor is believed to be due to tunneling phenomena through a highly doped Schottky barrier. Dropping the barrier height improves this contact resistance.