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NPN Transistor With a Modified Integrated Clamp SBD Layout

IP.com Disclosure Number: IPCOM000053886D
Original Publication Date: 1981-Nov-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Ferreri, R Nijhuis, R [+details]

Abstract

Fig. 1 shows a typical NPN transistor with a base clamp Schottky barrier diode (SBD). The SBD is defined on three sides by silicon nitride and on one side by base diffusion. The area tolerance of this SBD is extremely sensitive to overlay misalignment of the base E mask and all contact F mask.