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Technique for the Design of Ion Implanted Emitter Mask

IP.com Disclosure Number: IPCOM000053897D
Original Publication Date: 1981-Nov-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Capuron, JP Plassat, D [+details]

Abstract

A difference in bipolar technology between the ion-implanted and diffused emitter processes resides in silicon oxide thickness. When used in the ion-implanted process, the current diffusion mask etches the SiO(2) to discover the silicon, thus allowing the metal contact to be made, and leaves oxide for collector and Schottky barrier diode (SBD) contacts. The proposed technique prevents a new mask from being created to allow previously diffused emitter-defined products to be compatible with the ion-implanted process.