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The method which will be described hereunder allows the use of a standard inspection tool, (such as the KLA 100 or 101), normally used to detect random-type defects, as a non-random-defect inspection tool.
English (United States)
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Non Random Defect Control on Masks
The method which will be described hereunder allows the use of a standard
inspection tool, (such as the KLA 100 or 101), normally used to detect random-
type defects, as a non-random-defect inspection tool.
It is well known that chromium masks, widely used in semiconductor
integrated circuit processing at the lithography stage, basically disclose two kinds
of defects: non-random and random. Non-random (or repetitive) defects are
caused by a defective single segment, so the same defect may be found in each
cell of the cell array, since the latter is obtained from a single segment in a photo-
repeater tool. Semiconductor chips resulting therefrom will all be defective and
may require rejection. Random defects are generally caused by contamination
(dirt, dust, etc.) present on one or several cells; in this case only the chips
impacted by these defects may be rejected.
Random defects are generally detected with standard visual inspection tools
based on a comparison of two cells which point out defects which exist only on
one cell, but not on the two cells. These tools may also be used to control non-
random defects due to a method based on the addition of some extra cells in the
non-active area of the mask plate, i.e., extra cells outside the wafer area. The
figure shows a chromium mask with a standard product unit cell array, the extra
cells being referenced B.
The proposed method is as follows: 1. Apply the step/and/repeat method...