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Compensated Switchable Read Write Generator for Memory Using PNP Harper Cells Disclosure Number: IPCOM000053901D
Original Publication Date: 1981-Nov-01
Included in the Prior Art Database: 2005-Feb-12

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Denis, B Omet, D [+details]


The described circuit is to be used in a PNP-Harper cell memory to deliver two read-write reference voltages according to the operation mode of the memory. In read mode, the DC level of the signal is adjusted to track with the mean value of the base voltages 01 a selected cell. In write mode, its DC level rises to the selected word line level.