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Bit Line Discharge Circuit for NAND Logic Read Only Storage Arrays

IP.com Disclosure Number: IPCOM000053981D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Hanafi, HI [+details]

Abstract

This sensing circuit for a NAND or virtual ground read-only storage array circuit enables faster accessing of data signals. Read-only storage arrays using NAND logic are preferred for high density products since a maximum number of storage devices can be formed in a matrix without the use of metal-to-diffusion contacts.