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Gettering by Thermal Migration

IP.com Disclosure Number: IPCOM000053999D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Poponiak, MR [+details]

Abstract

Many gettering schemes have been proposed in the semiconductor industry to remove impurities and to improve device leakages and yields. All of the techniques currently in use require extensive times (hours) at elevated temperatures of approximately 1000 degrees C for the gettering cycle. A major disadvantage is that device characteristics can be modified by the heat cycle required for gettering.