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Refractory Silicide Electrodes for Capacitor Structures

IP.com Disclosure Number: IPCOM000054001D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Howard, JK Miller, RJ [+details]

Abstract

Some capacitors require high capacitance (20-40 nF) and high temperature stability (= 400 degrees C). The high capacitance value is most easily achieved by using dielectric materials with a high dielectric constant (Epsilon >/ approx. 60). Some potential dielectrics include titanate films (BaTiO(3), CaTiO (3), PbTiO(3), PZT, PLZT or TiO(2) rutile). The titanates are structures which exhibit high Epsilon values (Epsilon >/approx. 200) through high temperature phase transformation, e.g., the ferroelectric phase (perovskite) of PZT, PLZT forms at >/approx. 600 degrees C, or post-deposition annealing in a furnace or using rapid heating techniques.