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The subject multi-emitter clamped transistor lay-out allows a better balance between the different emitter-base junctions to be obtained.
English (United States)
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Balanced Junctions for Multi Emitter Clamped Transistor in Bipolar
The subject multi-emitter clamped transistor lay-out allows a better balance
between the different emitter-base junctions to be obtained.
Fig. 1 shows the electrical schematic of a multi-emitter transistor T with a
clamping Schottky barrier diode S, and Figs. 2 and 3 show two possible
integrated lay-outs. Fig. 2A and 3A are top views, and Figs. 2B and 3B are
sections along axis AA'.
Two base diffusion regions 1 and 2 are provided on each side of the Schottky
barrier diode S, and the base diffusions are connected with the diode anode
through B1 and B2. Two emitter regions are made into each of the base regions
1 and 2. Through this arrangement the base to emitter junction resistors are
The lay-out in Fig. 2 is used with a rectangular shape, and the one in Fig. 3
with a square shape.
Furthermore, a very good definition of SBD anode contact and transistor
base contact is achieved. Mask misalignments have no impact on these areas.
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