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Control of the Josephson Current Density of Edge Junctions

IP.com Disclosure Number: IPCOM000054076D
Original Publication Date: 1980-Dec-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Broom, RF Raider, SI [+details]

Abstract

Nb - Nb(2)O(5) - Pb Josephson tunnel junctions in which the oxide barrier is formed in a low-pressure Ar + O plasma (3 m torr) exhibit a Josephson current density j which is much higher at the edges of the Nb base electrode than on the surface, i.e., j shows a strong angular dependence. This adverse influence on the reproducibility of j can be reduced by increasing the pressure of the plasma and/or by using pure O(2) instead of the Ar + O(2) mixture.