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Multilevel Memory Device Employing an Anomalous Hall Material Disclosure Number: IPCOM000054163D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-13

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Marchese, MA McCormick, W Weaver, LR Winters, HO [+details]


Material with large anomalous Hall effects can be used as magnetic memory elements. Devices employing these materials for memory elements can be made to have a nonvolatile readout which is capable of storing multi-level signals and whose readout is proportional to the input signal used in writing.