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AND ROS Memory Using Two Polysilicon Layers

IP.com Disclosure Number: IPCOM000054172D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Adler, E Selleck, JE [+details]

Abstract

Two separate personalization masks are used to program depletion devices under first and second polysilicon layers of an AND ROS (read-only storage) memory to provide improved cell density.