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Technique and Fixture for Backside Silicon Removal

IP.com Disclosure Number: IPCOM000054203D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
DeLorenzo, DJ Gajda, JJ Wade, JA [+details]

Abstract

A fixture and plasma etching process are provided to preferentially remove silicon to expose thin oxides and thin metal films for analytical examination. The oxide and metal films remain in their original state without adding defects to them during the actual sample preparation. For example, thin gate oxides are exposed by removing all the Si on which the gate oxide has been previously grown, to delineate the defects in the oxide which cause yield problems.