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Metal Silicides for Schottky Barrier Diode Applications

IP.com Disclosure Number: IPCOM000054210D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Berenbaum, L Reith, TM [+details]

Abstract

The onset of silicide formation has been observed to be approximately 500 degrees C for TiSi, approximately 600 degrees C for TiSi, approximately 650 degrees C for WSi(2), and approximately 650 degrees C for TaSi(1). While not understanding the details of contact metal to silicon interactions vis-a-vis surface states, band bending, and impact on barrier height, it has been observed that less overall control of a low barrier process is possible when there is little or no metal/silicon interaction. One obvious solution is the use of a low barrier material which is subsequently sintered to form a silicide, rendering the device less surface controlled. Such a process is analogous to the PtSi process used for both high barrier SBDs (Schottky barrier diodes) and ohmic contacts.