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Method of Producing Adjacent Subcollector and Subisolation Areas

IP.com Disclosure Number: IPCOM000054231D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Hoffmister, W Schmitt, A Schorer, G Schumacher, H [+details]

Abstract

Subcollector and subisolation areas, self-aligned and adjacent to each other, are formed in a silicon substrate by producing a thin arsenic-doped surface layer, by selectively removing the arsenic, by ion implanting boron into the arsenic-depleted areas, and by annealing.