Browse Prior Art Database

Method of Reducing the Arsenic Doping in Silicon

IP.com Disclosure Number: IPCOM000054232D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Hoffmeister, W Schmitt, A Schumacher, H [+details]

Abstract

To remove an arsenic pile-up at the surface of silicon wafers, the heavily doped silicon (Si) is converted into silicon dioxide (SiO(2)) by means of thermal oxidation at relatively low temperatures follo the removal of the oxide and the arsenic at the SiO(2)-Si interface.