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Method of Reducing the Arsenic Doping in Silicon Disclosure Number: IPCOM000054232D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-13

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Hoffmeister, W Schmitt, A Schumacher, H [+details]


To remove an arsenic pile-up at the surface of silicon wafers, the heavily doped silicon (Si) is converted into silicon dioxide (SiO(2)) by means of thermal oxidation at relatively low temperatures follo the removal of the oxide and the arsenic at the SiO(2)-Si interface.