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Method of Preparing Hydrogenated Amorphous Silicon

IP.com Disclosure Number: IPCOM000054302D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Brodsky, MH Haller, I [+details]

Abstract

Electronically useful hydrogenated amorphous silicon films are presently deposited by either of two methods: (a) decomposition of silane (SiH(4)) in a RF glow discharge, and (b) sputtering by an argon and hydrogen plasma. Both of these methods expose the growing film to energetic radiation (both corpuscular, i.e. accelerated electrons and ions, and electromagnetic, i.e., vacuum UV light), damage from which, in the form of created gap states, is surmised to be detrimental to the performance of devices made of the amorphous silicon film.