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Process for Retaining Hydrogen in Annealed Silicon

IP.com Disclosure Number: IPCOM000054307D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Brodsky, MH Fowler, AB [+details]

Abstract

Amorphous silicon films often show improved electronic properties when hydrogenated (1,5). Similar results are seen or expected for poly-crystalline silicon and single crystal surfaces (3). Also, it is well known that in general annealing improves the properties of electronic materials. For example, annealing hydrogenated amorphous silicon can improve its photoconductivity (4), reduce its dark conductivity (4), increase its photoluminescence (2,5), and otherwise is likely to improve certain device characteristics such as diode, transistor, or photovoltaic behavior (6,a).