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High Density JFET

IP.com Disclosure Number: IPCOM000054309D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Dumke, WP Fowler, AB Rupprecht, HS [+details]

Abstract

JFETs (junction field-effect transistors) have the advantage of higher barrier heights (approximately 1.3 V) over MESFE's (approximately 0.8 eV) in GaAs, as an example. This is especially important when the devices are operated n the enhancement mode, which is most convenient for logic because thicker channels or less forward bias current is possible. However, these structures are complicated to build as compared to MESFETs. The JFETs can be prepared as follows: