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Method for Strengthening PbIn Films By Preventing Formation of Misfit Dislocations

IP.com Disclosure Number: IPCOM000054316D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Ho, PS Huang, CW Kuan, TS Libertini, SH Murakami, M Serrano, CM [+details]

Abstract

Misfit dislocations are found in PbIn films prepared on an oxidized silicon substrate by sequential deposition of Pb followed by In, for example, as shown in Fig. 1a. These misfit dislocations have been found to glide when such films are cooled to a temperature of about 100 K. Such glide can relax the strain induced by the thermal mismatch between the PbIn film and the silicon substrate. It is desirable to prevent formation of the misfit dislocations in order to strengthen the PbIn films.