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Flat Channel Sensitivity VMOS Structure

IP.com Disclosure Number: IPCOM000054369D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Kenney, DM [+details]

Abstract

A VMOS structure has improved bilateral characteristics when a graded boron diffusion is formed in a polysilicon gate used with a normally graded boron channel region.