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Method For Improving Reliability Of Schottky Diodes Disclosure Number: IPCOM000054405D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

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Anantha, NG Bhatia, HS Walsh, JL [+details]


Thermal oxide exposed through holes in a silicon nitride layer is removed over base contact and Schottky contact locations during the same step, despite the presence of thicker oxide over the Schottky locations, without undercutting the oxide and without the need for mask alignment.