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Self Aligned Integrated NPN (Vertical) And PNP (Lateral) Structures

IP.com Disclosure Number: IPCOM000054408D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Yeh, TH [+details]

Abstract

A self aligned NPN and PNP structure is shown using P+ polysilicon for base contact of NPN and emitter and collector contacts of PNP, and pyrolytic silicon oxide for isolation. In this case, a lateral PNP is formed. The conformal nature of chemical vapor deposited (CVD) silicon dioxide and the directionality of reactive ion etching (RIE) are taken advantage of to form pyrolytic silicon dioxide coated polysilicon areas. The complete processes are as follows: