Browse Prior Art Database

Compensated Base Transistor

IP.com Disclosure Number: IPCOM000054418D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Phillips, A [+details]

Abstract

NPN bipolar transistor device performance is improved by increasing the electron injection into the base, resulting from the narrowing of the energy band gap in the base by putting donor atoms into the base.