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Heat Transfer "Pillow" For Use In High Current Ion Implantation Disclosure Number: IPCOM000054419D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

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Related People

Bayer, EH Kranik, JR Mueller, WF [+details]


When doping silicon device wafers by means of a high current ion beam at a rapid rate, heat build-up becomes a problem especially when using photoresist as in the 2 Mu emitter process where excessive heat will cause the photoresist to blister. In the past, many attempts have been made to provide a heat transfer medium between wafer and heat sink, for instance, gallinm smear, copper or aluminum wool, indium, etc. However, such arrangements are not wholly acceptable for various reasons. Typically, they are too time consuming, or cause contamination, etc.