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Junction Depth Measurement Using The Scanning Light Spot Disclosure Number: IPCOM000054426D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

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Stoffel, A [+details]


The measurement of the junction depth, xj, of diffused or implanted doping profiles by plotting the photoresponse signal caused by a light spot scanning the bevel which was lapped at a small angle to the wafer surface is shown in the figure and given by: (see original). A shortcoming of this technique is that the light spot was started at the edge between the semiconductor wafer surface and bevel by an operator-dependent alignment.