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Treating Thin Films By Pulsed Ion Implantation

IP.com Disclosure Number: IPCOM000054435D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Briska, M Schackert, K [+details]

Abstract

Ions implanted into solids heat the areas into which they penetrate, being decelerated in the process. By implanting the ions into a thin surface layer with the aid of a pulsed beam, preferably consisting of ions of inert gases, the heat dissipation can be controlled and even largely avoided in that heating is practically restricted to the thin surface layer. The temperature to which the penetrated area is heated, ranging from several hundred to 10000 degrees C, depends on the energy of the ions and the pulse lengths. The theoretically calculated temperature reached when the pulses are very short, i.e., when they are of the order of microseconds.