Merged Enhancement/Depletion Field-Effect Transistor
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13
U.S. Patent 3,995,172 discloses a field-effect transistor (FET) having parallel enhancement and depletion channel regions connecting common source and drain regions. The combined FET can be switched more quickly than an enhancement-type FET in parallel with an independent depletiontype FET. Moreover, the combined FET can provide an output voltage equal to the power supply voltage at its source terminal.