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A micromechanical structure photolithographically produced on silicon by conventional methods is used to generate surface acoustic waves in silicon.
English (United States)
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Micromechanical Generation Of Acoustic Waves
A micromechanical structure photolithographically produced on silicon by
conventional methods is used to generate surface acoustic waves in silicon.
As shown in the drawing, the structure 10 has a silicon substrate 12 with a
(100) orientation, as shown, and a p/+/ layer 14 heavily doped with boron
(2x10/20/ cm/-3/). An epitaxial layer 16 is grown over the doped layer 14. On
top of the layer 16 is an insulating layer 18 of a material such as Si(3) N(4) or
SiO(2). A metal layer is deposited on top of the insulating layer 18 and etched to
form a plurality of long, narrow and closely spaced electrodes 20, as shown in
Fig. 2. The insulator 18 is etched away in lines of width R, spacing 2R, between
the metal electrodes 20 and parallel to the (011) direction. The silicon layer 16 is
etched using an anisotropic etchant, such as ethylene diamine, pyrocatechol and
water, to form long grooves 22 by undercutting the metal-coated insulator in the (011) direction. This leaves a periodic, two dimensional array of metal-coated
insulating bridges 24.
By applying a time-varying voltage between the metal electrodes 20 and the
p/+/ layer 14, the bridges 24 can be made to oscillate (by electrostatic
attraction);, and a periodic, mechanical disturbance is created on the surface in
the (010) direction. If the periodicity 2R of this disturbance corresponds to an
acoustic surface mode wavelength, for example, (see original). (where v(SAW) is