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Method To Prepare GaN In Closed Ampoules

IP.com Disclosure Number: IPCOM000054510D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Irene, EA Wiedemeier, H [+details]

Abstract

Gallium nitride (GaN) is a wide bandgap semiconductor (3.4 eV), which renders this material useful for optoelectronic applications. Typically, GaN is prepared by chemical vapor deposition (CVD) in open tube systems in which the reactive gases are constantly flowing into and out of the system. Solid GaN is made in these systems from the reaction of gaseous GaC1 and NH (1). Essentially, Ga metal is heated in a flowing stream of HC1, and the resulting gaseous GaC1 is mixed with NH(3) downstream in the reactor near where the GaN deposit is desired. The deposition region is kept at temperatures in excess of 600 degrees C.