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Shallow Silicon Contact And Diffusion Barrier Formed By Phase Separation

IP.com Disclosure Number: IPCOM000054512D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Olowolofe, JO Tu, KN [+details]

Abstract

A technique for forming silicide on shallow junction devices is described.