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Fully Self-Aligned MESFET Structure Disclosure Number: IPCOM000054514D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

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Related People

Gaensslen, FH Solomon, PM [+details]


This article describes a fully self-aligned metal-semiconductor field-effect transistor (MESFET) structure wherein the channel is implemented by ion implantation and is linked up with source and drain contacts by self-aligned diffusions.