Browse Prior Art Database

Fully Self-Aligned MESFET Structure

IP.com Disclosure Number: IPCOM000054514D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Gaensslen, FH Solomon, PM [+details]

Abstract

This article describes a fully self-aligned metal-semiconductor field-effect transistor (MESFET) structure wherein the channel is implemented by ion implantation and is linked up with source and drain contacts by self-aligned diffusions.