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Method For Producing GaAsInP Lasers

IP.com Disclosure Number: IPCOM000054516D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Fowler, AB Hodgson, RT Woodall, JM [+details]

Abstract

Control of output wavelength in a heterojunction laser can be achieved by the formation of a quaternary compound of InP with Ga and As ions implanted therein in a profile as set forth in the figure. The flux and energy of Ga and As ions are such that at any point in the implanted layer the sum of the As and P atom fraction equals the sum of the Ga and In atom fraction. Such a structure when annealed is reproducible and may be fabricated into a controlled output wavelength laser.