Browse Prior Art Database

Programmable/Erasable Read Mostly Memory

IP.com Disclosure Number: IPCOM000054519D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Faris, SM [+details]

Abstract

CdS and CdTe are semiconductors which, when excited by photons at 4 K degrees create holes which are trapped indefinitely. Upon raising the temperature to approximately 7O degrees K, the trapped holes disappear, and the semiconductor is back to its original (equilibrium) state. This property has been used by others (1,2) to enhance tunneling by more than three orders of magnitude when CdS or CdTe is used as a tunnel barrier between two superconductors. This mechanism can be exploited in a read mostly memory cell which is programmable by light pulses and erasable by raising the temperature to Greater than 7O degrees K.