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Self Consistant Correction Of Proximity Effects In Electron Beam Lithography

IP.com Disclosure Number: IPCOM000054538D
Original Publication Date: 1980-Feb-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Parikh, M [+details]

Abstract

This is a generalized self consistent technique for computing the incident electron exposure in an electron beam (E/B) lithography system, such that substantially uniform resultant exposure is received by the resist.