Browse Prior Art Database

N-Channel MOS MAOS FET Fabrication Technique

IP.com Disclosure Number: IPCOM000054590D
Original Publication Date: 1980-Mar-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Potter, MD [+details]

Abstract

This article describes the process for making a combined metal oxide semiconductor-metal aluminum oxide semiconductor field-effect transistor (MOS-MAOS FET) device which is provided with a self-aligned, source-drain isolation, and an aluminum oxide charge layer for parasitic FET protection and higher gated breakdowns.