Browse Prior Art Database

Etch Gas for Polysilicon Silicon Oxide (Nitride) Composite Structures

IP.com Disclosure Number: IPCOM000054626D
Original Publication Date: 1980-Mar-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Kitcher, JR Ozols, GM [+details]

Abstract

In the reactive ion etching of polysilicon layers where overlying or underlying layers of silicon dioxide and/or silicon nitride layers are present, a larger than normal etch rate ratio is achieved by employing about 50/50 mixtures of oxygen and carbon tetrachloride for etching and etching at an elevated substrate temperature. The polysilicon layers can, therefore, be etched without significant attack on the silicon oxide or nitride layers. The data in the table below provides a comparison. See Original.