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Metal Silicides for Schottky Barrier Diode Applications Disclosure Number: IPCOM000054630D
Original Publication Date: 1980-Mar-01
Included in the Prior Art Database: 2005-Feb-13

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Berenbaum, L Reith, TM [+details]


Present-day technological experience with low barrier Schottky barrier diode (SBD) contact metals has been limited to either Ta or TiW. Neither of these materials reacts readily with Si at typical device processing temperatures encountered after first metal pattern definition (400-500 degrees C). The onset of silicide formation for these materials has been observed to be approximately 500 degrees C for TiSi, approximately 600 degrees C for TiSi(2) [1]. While not understanding the details of contact metal to silicon interactions vis-a-vis surface states, band bending, and impact on barrier height, it has been observed that less overall control of a low barrier process is possible when there is little or no metal/silicon interaction.