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A method to form side-contacts for the source and drain of insulated gate field-effect devices is described in Figs. 1-6.
English (United States)
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Method of Forming Side-Contact
A method to form side-contacts for the source and drain of insulated gate
field-effect devices is described in Figs. 1-6.
The silicon wafer is processed up to source/drain diffusion and contact hole
etch by conventional processes to produce the Fig. 1 structure. The structure
includes P substrate 10, N+ region 11, surface silicon dioxide 12 having a contact
opening therein to the region 11, and polysilicon gate electrode 13.
A recessed contact well 14 with vertical sidewall well is etched into the
substrate 10 by means of reactive ion etching (RIE) to produce Fig. 2. A thin
silicon dioxide layer 15 is thermally grown on the sidewall of the contact well 14.
Then a thin chemically vapor deposited silicon nitride layer 16 is deposited over
the layer 15. The body is subjected to a directional RIE to etch the silicon nitride
layer 16 from the bottom of the contact well, leaving silicon nitride only on the
sidewalls of the well and other vertical steps, as shown in Fig. 4.
Thermal oxidation is used to grow the thick silicon dioxide layer 18 at the
bottom of the contact well. A dip-etch removes the silicon nitride and the thin
padding silicon dioxide from the sidewalls. During the oxidation, the N+ will
diffuse deeper to abut the isolation silicon dioxide 18 at the bottom of the contact
well, as shown in Fig. 5.
The process is then completed with final metallization. Any metallic
conducting material 20 can be used at this step, e.g., Al, S...