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Method of Forming Side-Contact

IP.com Disclosure Number: IPCOM000054631D
Original Publication Date: 1980-Mar-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Tsang, PJ [+details]

Abstract

A method to form side-contacts for the source and drain of insulated gate field-effect devices is described in Figs. 1-6.