Browse Prior Art Database

Low Voltage Memory Cell

IP.com Disclosure Number: IPCOM000054644D
Original Publication Date: 1980-Mar-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Fields, DB [+details]

Abstract

Shown above is a memory cell for random access read/write storage applications. The cell features high immunity against read operations disturbing the state of the cell, low voltage operation, and low power dissipation. This cell may be used in single or multiple port applications. Typical support circuitry is also shown.