Method for Measuring Sodium Contamination in MOS Structures
Original Publication Date: 1980-Mar-01
Included in the Prior Art Database: 2005-Feb-13
A method is described which directly measures the ion flow with digital coulomb meter, while avoiding displacement current and ion redrift contributions by proper choice of voltage waveform and reading times. The principle of the measurement may be understood with reference to the metal 3-silicon dioxide 2-silicon 1 (MOS) measurement structure of Fig. 1 and the bias voltages applied to the structure versus time (Fig.2).