Wafer Cooling during Ion Implantation
Original Publication Date: 1980-Mar-01
Included in the Prior Art Database: 2005-Feb-13
In order to limit the maximum wafer temperature during ion implantation, which temperature is of particular importance when implantation masks of photoresist material are used, the wafers are given a precise back surface doping prior to the first implantation. Such doping can, e.g., be performed during a previously executed diffusion in which the back surface of the wafer is not protected by SiO(2).