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Wafer Cooling during Ion Implantation Disclosure Number: IPCOM000054659D
Original Publication Date: 1980-Mar-01
Included in the Prior Art Database: 2005-Feb-13

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Schmitt, A Wagner, H [+details]


In order to limit the maximum wafer temperature during ion implantation, which temperature is of particular importance when implantation masks of photoresist material are used, the wafers are given a precise back surface doping prior to the first implantation. Such doping can, e.g., be performed during a previously executed diffusion in which the back surface of the wafer is not protected by SiO(2).